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BD135 NPN Bipolar Medium Power Transistor

 6.00


Transistor PolarityNPN
Collector−Emitter Voltage (VCEO)45V
Collector−Base Voltage (VCBO)45V
Continuous Collector Current (Ic)1.5A
Continuous Base Current (Ib)0.5A
DC Current Gain (hFE)40-250
Operating Temperature Range-65 – 150°C
Power Dissipation (Pd)12.5W
Thermal Resistance (ΘJA)100°C/W
Thermal Resistance (ΘJC)10°C/W

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BD135 is a three layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.

Features:-

• Low saturation voltage
• Simple drive requirements
• High safe operating area
• For low distortion complementary designs
• Easy to carry and handle

Transistor PolarityNPN
Collector−Emitter Voltage (VCEO)45V
Collector−Base Voltage (VCBO)45V
Continuous Collector Current (Ic)1.5A
Continuous Base Current (Ib)0.5A
DC Current Gain (hFE)40-250
Operating Temperature Range-65 – 150°C
Power Dissipation (Pd)12.5W
Thermal Resistance (ΘJA)100°C/W
Thermal Resistance (ΘJC)10°C/W

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