Category: Tags: ,

IRFZ44N MOSFET – 55V 49A N-Channel Power MOSFET TO-220 Package

 18.00


Number of Channels1 Channel
Transistor PolarityN-Channel
Drain-Source Breakdown Voltage (Vds)55V
Continuous Drain Current (Id)49A
Drain-Source Resistance (Rds On)0.0175Ohms
Gate-Source Voltage (Vgs)20V
Gate Charge (Qg)63 nC
Operating Temperature Range-55 – 175°C
Power Dissipation (Pd)94W

Share it:

IRFZ44N is specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Features:-

• Advanced Process Technology
• Ultra Low On-Resistance
• 175°C Operating Temperature
• Fast Switching
• Repetitive Avalanche Allowed up to Tjmax
• Lead-Free, RoHS Compliant

Number of Channels1 Channel
Transistor PolarityN-Channel
Drain-Source Breakdown Voltage (Vds)55V
Continuous Drain Current (Id)49A
Drain-Source Resistance (Rds On)0.0175Ohms
Gate-Source Voltage (Vgs)20V
Gate Charge (Qg)63 nC
Operating Temperature Range-55 – 175°C
Power Dissipation (Pd)94W

Reviews

There are no reviews yet.

Only logged in customers who have purchased this product may leave a review.