2N5401 is a PNP transistor designed specifically for high voltage – low power switching applications and amplifications. The NPN complementary for the device is 2N5551 and is available in TO-92, SOT54.
Pin Configuration
2N5401 has three pins like any other transistor namely EMITTER, BASE and COLLECTOR.
| Pin | Name | Function |
| 1 | Emitter | Current flows in to the device through this pin |
| 2 | Base | Base is used for triggering transistor ON and OFF |
| 3 | Collector | Current flows out of this pin |
2N5401 Features and Electrical characteristics
- Available in Pb−Free package
- High collector breakdown voltage
- With DC Current Gain (hFE) up to 100
- Maximum voltage across collector and emitter: 150V
- Maximum current allowed trough collector: 600mA
- Maximum voltage across collector and base: 160 V
- Maximum voltage across base and emitter: 5V
- Operating temperature range: -55ºC to +150ºC
- Maximum power dissipation : 0.62 W
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