The MC33153 is specifically designed as an IGBT driver for high power applications that include ac induction motor control, brushless dc motor control and uninterruptable power supplies. Although designed for driving discrete and module IGBTs, this device offers a cost effective solution for driving power MOSFETs and Bipolar Transistors. Device protection features include the choice of desaturation or overcurrent sensing and undervoltage detection. These devices are available in dual−in−line and surface mount packages.
Features:-
- High Current Output Stage: 1.0 A Source/2.0 A Sink
- Protection Circuits for Both Conventional and Sense IGBTs
- Programmable Fault Blanking Time
- Protection against Overcurrent and Short Circuit
- Undervoltage Lockout Optimized for IGBT’s
- Negative Gate Drive Capability
- Cost Effectively Drives Power MOSFETs and Bipolar Transistors
- This is a Pb−Free and Halide−Free Device
Specification:-
| Rating | Symbol | Value | Unit |
| Power Supply Voltage | VCC − VEE | 20 | V |
| Logic Input | Vin | VEE −0.3 to VCC | V |
| Current Sense Input | VS | −0.3 to VCC | V |
| Blanking/Desaturation Input | VBD | −0.3 to VCC | V |
| Gate Drive Output-Source Current | IO | 1 | A |
| Fault Output-Source Current | IFO | 25 | mA |
| Maximum Power Dissipation @ TA = 50°C | PD | 0.56 | W |
| Operating Junction Temperature | Tj | 150 | °C |
| Operating Ambient Temperature | Ta | −40 to +105 | °C |
| Storage Temperature Range | Tstg | −65 to +150 | °C |
| Human Body Model (HBM), Machine Model (MM), Charged Device Model (CDM) | ESD | 2500, 250, 1500 | V |
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