The H11F consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11F series devices are mounted in dual in-line packages.
Features:-
• As a remote variable resistor
• ≤ 100Ω to ≥ 300 MΩ
• ≥ 99.9% linearity
• ≤ 15 pF shunt capacitance
• ≥ 100 GΩ I/O isolation resistance As an analog switch
• Extremely low offset voltage
• 60 Vpk-pk signal capability
• No charge injection or latch-up
• ton, toff ≤ 15 µS
• UL recognized (File #E90700)
• VDE recognized (File #E94766) – Ordering option ‘300’ (e.g. H11F1.300)
Applications:-
• As a variable resistor-
Isolated variable attenuator
Automatic gain control
Active filter fine tuning/band switching
• As an analog switch-
Isolated sample and hold circuit
Multiplexed, optically isolated A/D conversion
Specification:-
| Symbol | Parameter | Value | Unit |
| IF | Forward current | 60 | mA |
| PD | Power dissipation | 100 | mW |
| VR | Reverse Voltage | 5 | V |
| Tstg | Storage temperature range | – 55 to + 150 | °C |
| TOPR | Operating Temperature | – 55 to + 150 | °C |
| TSOL | Lead Solder Temperature | 260 for 10 sec | °C |
| F(pk) | Forward Current – Peak (10 µs pulse, 1% duty cycle) | 1 | A |
| BV4-6 | Breakdown Voltage (either polarity) | ±30 | V |
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