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IRFZ44N MOSFET – 55V 49A N-Channel Power MOSFET TO-220 Package ₹ 18.00
IRF244 MOSFET – 250V 15A N-Channel Power MOSFET TO-247 Package ₹ 89.00
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IRF540 MOSFET – 100V 33A N-Channel HEXFET Power MOSFET TO-220 Package

₹ 20.00

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 100V
Continuous Drain Current (Id) 33A
Drain-Source Resistance (Rds On) 44mOhms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 71 nC
Operating Temperature Range -55 – 175°C
Power Dissipation (Pd) 130W
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IRF540 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.

Features

• Dynamic dV/dt rating
• Repetitive avalanche rated
• Fast switching
• Ease of paralleling
• Simple drive requirements
• Compliant to RoHS directive 2002/95/EC

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 100V
Continuous Drain Current (Id) 33A
Drain-Source Resistance (Rds On) 44mOhms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 71 nC
Operating Temperature Range -55 – 175°C
Power Dissipation (Pd) 130W

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