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IRF540 MOSFET – 100V 33A N-Channel HEXFET Power MOSFET TO-220 Package ₹ 20.00
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IRFZ44N MOSFET – 55V 49A N-Channel Power MOSFET TO-220 Package

₹ 18.00

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 55V
Continuous Drain Current (Id) 49A
Drain-Source Resistance (Rds On) 0.0175Ohms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 63 nC
Operating Temperature Range -55 – 175°C
Power Dissipation (Pd) 94W
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IRFZ44N is specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Features:-

• Advanced Process Technology
• Ultra Low On-Resistance
• 175°C Operating Temperature
• Fast Switching
• Repetitive Avalanche Allowed up to Tjmax
• Lead-Free, RoHS Compliant

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 55V
Continuous Drain Current (Id) 49A
Drain-Source Resistance (Rds On) 0.0175Ohms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 63 nC
Operating Temperature Range -55 – 175°C
Power Dissipation (Pd) 94W

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